document number: 94501 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 1 int-a-pak "half-bridge" (ultrafast speed igbt), 108 a GB100TS60NPBF vishay high power products features ? generation 5 non punch through (npt) technology ? ultrafast: optimized for hard switching speed 8 khz to 60 khz ?low v ce(on) ? 10 s short circuit capability ? square rbsoa ?positive v ce(on) temperature coefficient ?hexfred ? antiparallel diode wi th ultrasoft reverse recovery characteristics ? industry standard package ?al 2 o 3 dbc ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed for industrial level benefits ? benchmark efficiency for ups and welding application ? rugged transient performance ? direct mounting on heatsink ? very low junction to case thermal resistance product summary v ces 600 v i c dc 108 a v ce(on) at 100 a, 25 c 2.6 v int-a-pak absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 600 v continuous coll ector current i c t c = 25 c 108 a t c = 80 c 74 pulsed collector current i cm 200 clamped inductive load current i lm 200 diode continuous forward current i f t c = 25 c 106 t c = 80 c 69 gate to emitter voltage v ge 20 v maximum power dissipation p d t c = 25 c 390 w t c = 80 c 219 isolation voltage v isol any terminal to case, t = 1 min 2500 v www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94501 2 revision: 04-may-10 GB100TS60NPBF vishay high power products int-a-pak "half-bridge" (ultrafast speed igbt), 108 a electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units collector to emitte r breakdown voltage v br(ces) v ge = 0 v, i c = 500 a 600 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 50 a - 1.95 2.1 v ge = 15 v, i c = 100 a - 2.6 2.85 v ge = 15 v, i c = 50 a, t j = 125 c - 2.21 2.44 v ge = 15 v, i c = 100 a, t j = 125 c - 3.05 3.38 gate threshold voltage v ge(th) v ce = v ge , i c = 500 a 3 4.6 6 collector to emitter leakage current i ces v ge = 0 v, v ce = 600 v - 0.01 0.1 ma v ge = 0 v, v ce = 600 v, t j = 150 c - 3.7 10 diode forward voltage drop v fm i c = 50 a - 1.35 1.66 v i c = 100 a - 1.57 1.96 i c = 50 a, t j = 125 c - 1.27 1.50 i c = 100 a, t j = 125 c - 1.57 1.89 gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units turn-on switching loss e on i c = 100 a, v cc = 360 v, v ge = 15 v, r g = 4.7 , l = 200 h, t j = 25 c -0.6- mj turn-off switching loss e off -1.1- total switching loss e tot -1.7- turn-on switching loss e on i c = 100 a, v cc = 360 v, v ge = 15 v, r g = 4.7 , l = 200 h, t j = 125 c -0.8- turn-off switching loss e off -1.3- total switching loss e tot -2.1- turn-on delay time t d(on) - 197 - ns rise time t r -50- turn-off delay time t d(off) - 225 - fall time t f -72- reverse bias safe operating area rbsoa t j = 150 c, i c = 200 a, r g = 27 , v ge = 15 v to 0 fullsquare short circuit safe operating area scsoa t j = 150 c, v cc = 400 v, v p = 600 v, r g = 27 , v ge = 15 v to 0 10 - - diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v cc = 400 v, t j = 25 c - 116 140 ns diode peak reverse current i rr -1115a diode recovery charge q rr - 600 1050 nc diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v cc = 400 v, t j = 125 c - 152 190 ns diode peak reverse current i rr -1620a diode recovery charge q rr - 1215 1900 nc www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 94501 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 3 GB100TS60NPBF int-a-pak "half-bridge" (ultrafast speed igbt), 108 a vishay high power products fig. 1 - typical igbt output characteristics t j = 25 c, t p = 500 s fig. 2 - typical igbt output characteristics t j = 125 c, t p = 500 s fig. 3 - typical transfer characteristics v ce = 20 v, t p = 500 s fig. 4 - typical collecto r to emitter voltage vs. junction temperature, v ge = 15 v, 500 s pulse width thermal and mechanical specifications parameter symbol min. typ. max. units operating junction and storage temperature range t j , t stg - 40 - 150 c junction to case per leg igbt r thjc - 0.23 0.32 c/w diode - 0.38 0.64 case to sink per module r thcs -0.1- mounting torque case to heatsink - - 4 nm case to terminal 1, 2, 3 - - 3 weight - 185 - g i ce (a) v ce (v) 0123456 0 50 100 150 200 vge = 9v vge = 18v vge = 15v vge = 12v i ce (a) 0123456 0 50 100 150 200 vge = 9v vge = 18v vge = 15v vge = 12v v ce (v) i ce (a) v ge (v) 0246810 0 20 40 60 80 100 120 140 160 180 200 tj = 25c tj = 125c 0 20406080100120140160 1.5 2 2.5 3 3.5 4 4.5 5 ic = 50a ic = 100a ic = 200a t j , junction temperature (c) v ce , collector -to-emitter voltage (v) www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94501 4 revision: 04-may-10 GB100TS60NPBF vishay high power products int-a-pak "half-bridge" (ultrafast speed igbt), 108 a fig. 5 - diode forward characteristics, t p = 500 s fig. 6 - maximum collector current vs. case temperature fig. 7 - typical energy loss vs. i c , t j = 125 c, l = 200 h, v cc = 360 v, r g = 4.7 , v ge = 15 v fig. 8 - typical switching time vs. i c t j = 125 c, l = 200 h, v cc = 360 v, r g = 4.7 , v ge = 15 v fig. 9 - typical energy loss vs. r g t j = 125 c, l = 200 h, v cc = 360 v, i ce = 100 a, v ge = 15 v fig. 10 - typical switching time vs. r g t j = 125 c, l = 200 h, v cc = 360 v, i ce = 100 a, v ge = 15 v i f (a) v f (v) 0.0 0.5 1.0 1.5 2.0 0 50 100 150 200 tj = 25c tj = 125c 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 dc t c , case temperature (c) maximum dc collector current (a) energy (mj) i c (a) 0 20406080100120 0 200 400 600 800 1000 1200 1400 eon eoff switching time (ns) i (a) 20 40 60 80 100 10 100 1000 td(off) tr td(on) tf 0 1020304050 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 eon eoff energy (mj) r g ( ) 0 1020304050 10 100 1000 td(off) tr td(on) tf energy time (ns) r g ( ) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 94501 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 5 GB100TS60NPBF int-a-pak "half-bridge" (ultrafast speed igbt), 108 a vishay high power products fig. 11 - typical diode i rr vs. i f , t j = 125 c fig. 12 - typical diode i rr vs. r g , t j = 125 c, i f = 100 a fig. 13 - typical diode i rr vs. di f /dt, t j = 125 c, v cc = 360 v, i f = 150 a, v ge = 15 v fig. 14 - typical switching losses vs. gate resistance, t j = 125 c, l = 200 h, r g = 10 , v cc = 360 v, v ge = 15 v fig. 15 - typical switching lo sses vs. junction temperature, l = 200 h, r g = 10 , v cc = 360 v, v ge = 15 v fig. 16 - typical switching losses vs. collector to emitter current, t j = 125 c, r g1 = 4.7 v, r g2 = 0 , v cc = 360 v, v ge = 15 v i rr (a) i f (a) 020406080100120 0 10 20 30 40 50 60 70 80 90 100 27 ohm 47 ohm 4.7 ohm 0 1020304050 0 20 40 60 80 100 i rr (a) r g ( ) 600 800 1000 1200 1400 1600 1800 50 60 70 80 90 i rr (a) di f / dt (a/s) total switching losses (mj) r g ( ) 0 1020304050 1 2 3 4 5 6 7 8 9 total switching losses (mj) t j - junction temperature (c) 0 255075100125 0.1 1 10 ic = 100a ic = 50a ic = 25a total switching losses (mj) i c (a) 20 40 60 80 100 0 0.5 1 1.5 2 2.5 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 94501 6 revision: 04-may-10 GB100TS60NPBF vishay high power products int-a-pak "half-bridge" (ultrafast speed igbt), 108 a fig. 17 - maximum transient thermal impedance, junction to case (igbt) fig. 18 - maximum transient thermal impedance, junction to case (hexfred ? ) thermal response (z thjc ) t 1 , rectangular pulse duration (sec) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.001 0.01 0.1 1 single pulse (thermal response) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01 notes: 1. duty factor d = t1/t2 2. peak tj = pdm x zthjc + tc thermal response (z thjc ) t 1 , rectangular pulse duration (sec) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.001 0.01 0.1 1 single pulse (thermal response) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01 notes: 1. duty factor d = t1/t2 2. peak tj = pdm x zthjc + tc www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 94501 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 04-may-10 7 GB100TS60NPBF int-a-pak "half-bridge" (ultrafast speed igbt), 108 a vishay high power products ordering information table circuit configuration links to related documents dimensions www.vishay.com/doc?95173 1 - insulated gate bipolar transistor (igbt) 2 - b = igbt generation 5 npt 3 - current rating (100 = 100 a) 4 - circuit configuration (t = half-bridge) 5 - package indicator (s = int-a-pak) 6 - voltage rating (60 = 600 v) 8 - lead (pb)-free 7 - speed/type (n = ultrafast igbt) device code 5 13 24 678 g b 100 t s 60 n pbf 6 7 1 4 5 3 2 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 95067 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 15-feb-08 1 int-a-pak igbt/thyristor outline dimensions vishay semiconductors dimensions in millimeters (inches) 80 (3.15) ? 6.5 (0.25 dia) 30 (1.18) 9 (0.33) 7 (0.28) 28 (1.10) 29 (1.15) 37 (1.44) 5 (0.20) 2.8 x 0.8 (0.11 x 0.03) 7 6 5 4 123 23 (0.91) 23 (0.91) 17 (0.67) 35 (1.38) 14.5 (0.57) 3 screws m6 x 10 66 (2.60) 94 (3.70) www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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